Title :
Universal mobility behavior in Si/SOI inversion layers and mobility degradation in extremely thin Si/SOI
Author :
Shoji, Masanari ; Omura, Yasuhisa ; Tomizawa, Masaaki
Author_Institution :
NTT LSI Labs., Atsugi, Japan
Abstract :
This paper shows the physical origin and the limitation of the universal behavior of the effective mobility as a function of effective vertical electric field for fully depleted MOSFETs/SOI by investigating the electronic states of the inversion layers. In this context, the mobility degradation of extremely thin Si/SOI is also discussed
Keywords :
MOSFET; carrier mobility; inversion layers; silicon-on-insulator; Si-SiO2; Si/SOI inversion layers; effective mobility; electronic states; fully depleted MOSFETs; universality; vertical electric field; Degradation; Electrons; Impurities; Laboratories; Large scale integration; MOSFETs; Phonons; Rough surfaces; Surface roughness; Voltage;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526484
