Title :
Identification and verification by experiment and simulation for the possibility of die cracking induces by UIL test
Author :
Yuan, Zhongfa ; Yong Liu ; Irving, Scott ; Luk, Timwah
Author_Institution :
Fairchild Semicond. (Suzhou) Corp., Suzhou
Abstract :
An undamped inductive loading (UIL) or switching (UIS) test is critical for power MOSFET dice in order to evaluate the device "ruggedness". During UIL testing, die cracking may appear due to electrical overstress (EOS) induced by the power input. A method that combines both FEA and fractography analysis to identify and verify the possibility of die cracking induced by UIL test is presented in this paper.
Keywords :
cracks; finite element analysis; fractography; power MOSFET; semiconductor device testing; die cracking; electrical overstress; finite element analysis; fractography analysis; power MOSFET; undamped inductive loading; undamped inductive switching; DVD; Diodes; Earth Observing System; Finite element methods; Inductors; MOSFET circuits; Packaging; Power semiconductor switches; Semiconductor device testing; Thermal stresses;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, 2008. EuroSimE 2008. International Conference on
Conference_Location :
Freiburg im Breisgau
Print_ISBN :
978-1-4244-2127-5
Electronic_ISBN :
978-1-4244-2128-2
DOI :
10.1109/ESIME.2008.4525065
