Title :
Multi-Gate MOSFET Design
Author :
Knoblinger, G. ; Pacha, C. ; Kuttner, F. ; Marshall, A. ; Russ, C. ; Haibach, P. ; Patruno, P. ; Schulz, T. ; Arnim, K.V. ; Engelstaedter, J.P. ; Bertolissi, L. ; Xiong, W. ; Cleavelin, C.R. ; Schruefer, K.
Author_Institution :
Infineon Technol. Austria, Villach
Abstract :
In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic analog building blocks realized with these advanced devices are shown. Furthermore the influence of new device specific effects on analog circuits, like self heating or output conductance improvement due to undoped body are discussed and RF and ESD issues are covered
Keywords :
MOSFET; electrostatic discharge; network synthesis; MuGFET; circuit design; digital circuits; electrostatic discharge; midgap gate electrode materials; multigate MOSFET design; multigate field effect transistors; Analog circuits; Circuit synthesis; Conducting materials; Digital circuits; Electrodes; Electrostatic discharge; FETs; Heating; MOSFET circuits; Radio frequency;
Conference_Titel :
Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0303-0
DOI :
10.1109/ESSCIR.2006.307532
