Title :
Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs. ISPSD ´91 (Cat. No.91CH2987-6)
Abstract :
The following topics are dealt with: dielectric isolation technology; IC processes; device models; LIGBTs (lateral IGBTs) and diodes; thyristors; device physics; process technology; insulated-gate bipolar transistors; and applications
Keywords :
insulated gate bipolar transistors; integrated circuit technology; power integrated circuits; power transistors; semiconductor device models; semiconductor devices; thyristors; IC processes; device models; device physics; dielectric isolation technology; diodes; insulated-gate bipolar transistors; lateral IGBTs; power IC; power transistors; process technology; thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146113
