An RF BiCMOS bandpass amplifier using an active inductor

Author

Akbari-Dilmaghani, Rahim ; Payne, Alison

Author_Institution

Microcosm Commun., Bristol, UK

Volume

2

fYear

1999

fDate

5-8 Sep 1999

Firstpage

611

Abstract

This paper presents the design of an RF BiCMOS differential bandpass amplifier using a differential active inductor. The amplifier employs a differential transconductor plus active tuned load to realise amplification and frequency selection simultaneously. The architecture employs tuneable compensation techniques that reduce phase error due to additional device parasitics, thus extending the usable frequency range of the circuit closer to the f_T of the technology. The centre-frequency, gain and bandwidth of the bandpass amplifier are independently controlled, and in particular the centre-frequency can be varied over a wide range (200 MHz -1.7 GHz). Simulation results using device parameters from the AMS 0.8 μm BiCMOS process are presented

Keywords

BiCMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; active networks; circuit tuning; differential amplifiers; feedback amplifiers; inductors; integrated circuit design; 0.8 micron; 200 MHz to 1.7 GHz; AMS BiCMOS process; RF BiCMOS bandpass amplifier; active tuned load; centre-frequency variation; device parasitics; differential active inductor; differential bandpass amplifier; differential transconductor; frequency selection; phase error reduction; tuneable compensation techniques; Active inductors; Bandwidth; BiCMOS integrated circuits; Circuit simulation; Differential amplifiers; Radio frequency; Radiofrequency amplifiers; Transconductors; Tunable circuits and devices; Tuned circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on

Conference_Location

Pafos

Print_ISBN

0-7803-5682-9

Type

conf

DOI

10.1109/ICECS.1999.813182

Filename

813182