Low power-low voltage band gap references for flash-EEPROM integrated circuits: design alternatives and experiments

Author

Ripamonti, G. ; Bertolaccini, M. ; Peritore, R. ; Schippers, S.

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

2

fYear

1999

fDate

5-8 Sep 1999

Firstpage

635

Abstract

Two alternative circuits for very low-supply-voltage bandgap voltage references BGR in a flash memory environment are designed and compared. The circuits allow operation at supply voltages as low as 0.9 V, while requiring as low as 5 μA current. Sensitivity to supply voltage variations is reduced by means of suitable feedback circuits. Experimental results confirm that the BGR operates correctly and can be employed in future ultra-low-supply-voltage flash memory devices

Keywords

circuit feedback; flash memories; integrated memory circuits; low-power electronics; reference circuits; 0.9 V; 5 muA; LV band gap references; feedback circuits; flash memory devices; flash-EEPROM ICs; low power band gap references; low voltage operation; supply voltage variations sensitivity; ultra-low-supply-voltage memory devices; Charge pumps; Circuit topology; Flash memory; Low voltage; MOS devices; Microelectronics; P-n junctions; Photonic band gap; Resistors; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on

Conference_Location

Pafos

Print_ISBN

0-7803-5682-9

Type

conf

DOI

10.1109/ICECS.1999.813187

Filename

813187