Compact quasi planar silicon bandpass filters based on metallic periodic structure for Q and V band applications

Author

Ferrand, P. ; Chatras, M. ; Baillargeat, D. ; Blondy, P. ; Verdeyme, S. ; Puech, J. ; Lapierre, L. ; Galiere, J. ; Estebe, E.

Author_Institution

Faculte des Sci. de Limoges, IRCOM-UMR, Limoges, France

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

1459

Abstract

Small size filters are presented here, they are based on a periodic lattice of metallic holes that form coupled silicon resonators. The first structure is a filter at 45 GHz with 8% bandwidth at -3 db, realized on 430 μm thick high resistivity silicon wafer using a wet etching process. I/O CPW feeds are printed on the top of the substrate. The second structure is a filter at 58.5 GHz with 2% bandwidth at -3 db. The via holes lattice is realized with deep RIE process and the filter is bonded to a PCB with a flip chip technique. Based on the same principle, a CPW to waveguide transition is finally presented.

Keywords

band-pass filters; coplanar waveguides; elemental semiconductors; etching; flip-chip devices; micromachining; periodic structures; resonators; waveguide transitions; 430 micron; 45 GHz; 58.5 GHz; I-O CPW feeds; PCB; Q band application; RIE process; Si; V band application; bandpass filters; coupled silicon resonators; flip chip bonding; metallic holes; metallic periodic structure; micromachining; periodic lattice; quasi planar filters; resistivity; silicon wafer; substrate; via holes lattice; waveguide transition; wet etching; Band pass filters; Bandwidth; Conductivity; Coplanar waveguides; Feeds; Lattices; Periodic structures; Resonator filters; Silicon; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1338848

Filename

1338848