DocumentCode
3490765
Title
Narrow-band band-pass filters on silicon substrates at 30 GHz
Author
Yu, D.S. ; Cheng, C.F. ; Chan, K.T. ; Chin, Albert ; McAlister, S.P. ; Zhu, C. ; Li, M.F. ; Kwong, D.L.
Author_Institution
Dept. of Electron. Eng., National Chiao Tung Univ., Hsinchu, Taiwan
Volume
3
fYear
2004
fDate
6-11 June 2004
Firstpage
1467
Abstract
Using optimized ion implantation, we have fabricated high performance 2-pole and 3-pole CPW filters on Si substrates at ∼30 GHz, with very narrow 1.0 (3.1%) GHz and 0.75 (2.5%) GHz pass-band as well as small insertion loss. Microstrip filters on Si show small 3.2 dB loss at 27 GHz, which has smaller size than CPW case without the large coplanar ground planes. In contrast, the nonimplanted filters failed due to the high substrate loss.
Keywords
band-pass filters; coplanar waveguides; elemental semiconductors; ion implantation; microstrip filters; 27 GHz; 3.2 dB; 30 GHz; CPW filters; band-pass filters; coplanar ground plane; filter fabrication; insertion loss; microstrip filters; narrow band; optimized ion implantation; silicon substrates; substrate loss; Band pass filters; Bandwidth; Conductivity; Coplanar waveguides; Insertion loss; Ion implantation; Microstrip filters; Narrowband; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1338850
Filename
1338850
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