Title :
Improvement in electrical properties of SIMOX by high-temperature oxidation
Author :
Mrstik, B.J. ; McMarr, P.J. ; Hughes, H.L. ; Anc, M.J. ; Krull, W.A.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
For the SIMOX process to become a viable technology, it must be capable of producing a buried oxide (BOX) layer with a high breakdown field and a low density of defects which short the superficial Si layer with the substrate. In this paper we discuss a low cost technique for significantly improving the electrical properties of the BOX. The process is compatible with the formation of a superficial Si layer with a very low density of dislocations
Keywords :
SIMOX; buried layers; dislocation density; electric breakdown; integrated circuit technology; oxidation; BOX layer; SIMOX process; Si; buried oxide layer; dislocation density; electrical properties; high breakdown field; high-temperature oxidation; low cost technique; low defects density; superficial Si layer; Annealing; Breakdown voltage; Costs; Dielectric materials; Dielectric substrates; Etching; Implants; Oxidation; Propellants; Temperature;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526516
