Title :
High power and high efficiency 30 W compact S-band HBT power chips with gold or diamond heat spreaders
Author :
Piotrowicz, S. ; Chartier, E. ; Jacquet, J.C. ; Floriot, D. ; Coupat, J.M. ; Framery, C. ; Eudeline, P. ; Auxemery, P.
Author_Institution :
THALES Res. & Technol., Orsay, France
Abstract :
HBT power technology offers an excellent compromise for high power and high efficiency amplifiers up to the Ku band. In this paper, we present the performances of GaInP/GaAs power chips. Two different approaches to thermal management were proposed for very high power levels. Pulsed power measurements of power chips integrating thick gold or diamond as heat spreaders are reported. An output power of 31 W with 49.5% of PAE was obtained at 2.9 GHz on 3.3mm2 of GaAs area. This corresponds to a power density of 9.4W/mm2. These power chips constitute very attractive chips for compact high power, high efficiency amplifiers for radar and communication systems.
Keywords :
diamond; gallium compounds; gold; heterojunction bipolar transistors; microwave integrated circuits; power amplifiers; power integrated circuits; power measurement; radar; 2.9 GHz; 31 W; GaAs; GaInP; HBT power technology; Ku band; S-band HBT power chips; communication systems; compact HBT power chips; diamond heat spreaders; gold heat spreaders; high efficiency HBT power chips; high efficiency amplifiers; high power HBT power chips; high power amplifier; power density; power levels; pulsed power measurements; radar systems; thermal management; Energy management; Gallium arsenide; Gold; Heterojunction bipolar transistors; High power amplifiers; Power generation; Power measurement; Pulse amplifiers; Pulse measurements; Thermal management;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1338868
