Title :
Process optimization the growth of GaP epitaxial layer on 2° GaAs substrate
Author :
Ni, Qinfei ; Qiu, Zhongyang ; Yu, Bin ; Liu, Xuezhen ; Zhang, Tiancheng ; Wang, Yuxia
Author_Institution :
State Key Lab. of High Power Semicond. Laser, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
GaP epitaxial layer was prepared by planetary MOVCD on 2°GaAs substrate. Use the XRD (X-ray diffraction) to test the full width at half maximum (FWHM) of rocking-curve and use the high power microscope to watch the crystal surface quality. Summary the growth condition of high-quality GaP epitaxial layer. The results show that the surface quality depends on high growth temperature and slow growth velocity. Perfect surface was obtained when the thickness that grow GaP epitaxial layer in low temperature and slow velocity is 20nm.
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; epitaxial growth; gallium compounds; semiconductor epitaxial layers; semiconductor growth; surface morphology; 2° GaAs substrate; FWHM; GaAs; GaP; X-ray diffraction; XRD; crystal surface quality; full width at half maximum; growth temperature; growth velocity; high power microscopy; high-quality epitaxial layer growth; perfect surface; planetary MOVCD; process optimization; rocking-curve; Crystals; Epitaxial layers; Gallium arsenide; Morphology; Substrates; Surface morphology; Surface treatment; 2°; GaAs; GaP; MOCVD; XRD;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316201
