Facet passivation of GaAs semiconductor lasers using chemical and plasma methods

Author

Zhou, Lu ; Wang, Yunhua ; Jia, Baoshan ; Bai, Duanyuan ; Gao, Xin ; Bo, Baoxue ; Qiao, Zhongliang

Author_Institution

State Key Lab. of High Power Semicond. lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

49

Lastpage

51

Abstract

To remove the cavity surface contamination of semiconductor lasers and improve their COD threshold, the novel sulfur solution, acid pre-treatment plus sulfur solution and RF Ar plasma cleaning had been used on GaAs (100) substrate. The PL intensities after three types of processing increased by 30%, 42% and 33% respectively. With three methods used for laser process, we found that, in addition to acid pre-treatment, the COD threshold of lasers processed by other two methods have been improved greatly.

Keywords

III-V semiconductors; gallium arsenide; passivation; photoluminescence; plasma materials processing; quantum well lasers; spectral line intensity; surface cleaning; surface contamination; COD threshold; GaAs; GaAs (100) substrate; PL intensities; RF Ar plasma cleaning; acid pre-treatment; cavity surface contamination; chemical methods; facet passivation; laser process; plasma methods; semiconductor lasers; sulfur solution; Cleaning; Gallium arsenide; Passivation; Plasmas; Semiconductor lasers; Substrates; COD; plasma cleaning; semiconductor lasers; sulphur-passivated;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316213

Filename

6316213