Transient power in CMOS gates driving LC transmission lines

Author

Ismail, Yehea I. ; Friedman, Eby G. ; Neves, Jose L.

Author_Institution

Dept. of Electr. Eng., Rochester Univ., NY, USA

Volume

1

fYear

1998

fDate

1998

Firstpage

337

Abstract

The dynamic and short-circuit power consumption of a CMOS gate driving an LC transmission line as a limiting case of an RLC transmission line is investigated in this paper. Closed form solutions for the output voltage and short-circuit power of a CMOS gate driving an LC transmission line are presented. These solutions agree with circuit simulations within 11% error for a wide range of transistor widths and line impedances for a 0.25 μm CMOS technology. The ratio of the short-circuit to dynamic power is shown to be less than 7% for CMOS gates driving LC transmission lines where the line is matched or underdriven. The total power consumption is expected to decrease as inductance effects becomes more significant as compared to an RC dominated interconnect line

Keywords

CMOS logic circuits; equivalent circuits; integrated circuit interconnections; logic gates; transient analysis; transmission line theory; 0.25 micron; CMOS gates; LC transmission lines; RLC transmission line; closed form solutions; dynamic power consumption; inductance effects; output voltage; short-circuit power consumption; transient power; CMOS technology; Circuit simulation; Closed-form solution; Distributed parameter circuits; Energy consumption; Impedance; Inductance; Power system transients; Power transmission lines; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1998 IEEE International Conference on

Conference_Location

Lisboa

Print_ISBN

0-7803-5008-1

Type

conf

DOI

10.1109/ICECS.1998.813335

Filename

813335