Mid-IR type-II interband cascade lasers with quantum efficiency exceeding 450%

Author

Bruno, J.D. ; Yang, Rui Q. ; Bradshaw, J.L. ; Pham, J.T. ; Wortman, D.E.

Author_Institution

US Army Res. Lab., Adelphi, MD, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

13

Abstract

Summary form only given. We obtain the highest peak power yet reported among any mid-IR semiconductor diode lasers at emission wavelengths beyond 3 μm. Note also that the power values reported here have been corrected only for the transmission coefficients of the collection optics and not corrected for beam divergence. If the spatial divergence of the laser beam is taken into account, the actual emitted powers and differential external quantum efficiency (DEQE) would be considerably higher

Keywords

infrared sources; laser transitions; quantum well lasers; 3 mum; 450 percent; actual emitted powers; beam divergence; collection optics; differential external quantum efficiency; emission wavelengths; highest peak power; mid-IR semiconductor diode lasers; mid-IR type-II interband cascade lasers; quantum efficiency; spatial divergence; transmission coefficients; Electrons; Laser transitions; Optical scattering; Power generation; Power lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.813452

Filename

813452