Two-photon photoluminescence and current images of bulk GaN and InGaN green LEDs

Author

Sun, Chi-Kuang ; Gan, Kian-Giap ; Kao, Fu-Jen ; Huang, Mao-Kuo ; Wang, Yung-Shun ; Mack, Michael P. ; DenBaars, Steven P.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

1

fYear

1999

fDate

1999

Firstpage

39

Abstract

Our recent studies shows that GaN possesses large two-photon absorption coefficients, even at infrared (IR) wavelength dose to midgap energy. This indicates that two photon confocal photoluminescence images and two-photon optical-beam-induced-current (TP-OBIC) microscopy can be applied on the GaN studies and imaging. Confocal laser scanning microscopy provides a significant improvement in axial resolution over conventional epi-fluorescence microscopy by eliminating out-of-focus fluorescence using a spatial filter in the form of a confocal aperture

Keywords

OBIC; light emitting diodes; optical focusing; optical microscopy; optical scanners; photoluminescence; semiconductor device testing; two-photon spectroscopy; GaN; InGaN; InGaN green LEDs; axial resolution; bulk GaN; confocal aperture; confocal laser scanning microscopy; epi-fluorescence microscopy; large two-photon absorption coefficients; midgap energy; out-of-focus fluorescence; spatial filter; two photon confocal photoluminescence images; two-photon optical-beam-induced-current microscopy; two-photon photoluminescence; Electromagnetic wave absorption; Energy resolution; Fluorescence; Gallium nitride; Optical filters; Optical imaging; Optical microscopy; Photoluminescence; Spatial filters; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.813465

Filename

813465