• DocumentCode
    349268
  • Title

    InGaAs/GaAs photorefractive quantum well device with quantum confined Stark effect

  • Author

    Kageshima, H. ; Iwamoto, Satoshi ; Nishioka, M. ; Someya, T. ; Miyazaki, H. ; Fukutani, K. ; Arakawa, Y. ; Yasui, I. ; Shimura, T. ; Kuroda, K.

  • Author_Institution
    Dept. of Ind. Sci., Tokyo Univ., Japan
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    68
  • Abstract
    We demonstrated an InGaAs-GaAs photorefractive MQW device with quantum confined Stark effect (QCSE) for the first time. The maximum diffraction efficiency is 2x10-4. This value is 100 times smaller than the expected one. This disagreement indicates the effect of the lateral transport
  • Keywords
    carrier mobility; gallium arsenide; indium compounds; photorefractive materials; quantum confined Stark effect; semiconductor quantum wells; InGaAs-GaAs; InGaAs-GaAs photorefractive MQW device; InGaAs/GaAs photorefractive quantum well device; lateral transport effects; maximum diffraction efficiency; quantum confined Stark effect; Absorption; Dielectrics; Diffraction; Gallium arsenide; Indium gallium arsenide; Photorefractive effect; Photorefractive materials; Potential well; Quantum well devices; Stark effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5634-9
  • Type

    conf

  • DOI
    10.1109/LEOS.1999.813480
  • Filename
    813480
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=349268