DocumentCode
3493045
Title
Buried triple p-n junction structure in a BiCMOS technology for color detection
Author
Choulkha, M.B. ; Lu, G.N. ; Sedjil, M. ; Sou, G. ; Atquie, G.
Author_Institution
Lab. des Instrum. et Syst., Univ. Pierre et Marie Curie, Paris, France
fYear
1997
fDate
28-30 Sep 1997
Firstpage
108
Lastpage
111
Abstract
A buried triple p-n junction structure in a BiCMOS process was investigated for color detection. A physically based model of the BTJ structure was developed. A color sensing chip was designed and fabricated. Measurements, simulations as well as colorimetric characterization were performed
Keywords
BiCMOS integrated circuits; BTJ structure; BiCMOS technology; buried triple p-n junction structure; color detection; color sensing chip; colorimetric characterization; physically based model; BiCMOS integrated circuits; Color; Detectors; Fabrication; Image color analysis; Instruments; Optical filters; Optical surface waves; P-n junctions; Performance evaluation; Semiconductor device measurement; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-3916-9
Type
conf
DOI
10.1109/BIPOL.1997.647408
Filename
647408
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