Title :
Characterization of DLC-Si films prepared by RF-PECVD
Author :
Tang, Jilong ; Wang, Yong
Author_Institution :
Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
Silicon-doped diamond-like carbon (DLC) films with a Si content from 6.30% to 19.73% were grown on Si substrate by radio frequency plasma-enhanced chemical vapour deposition (RF-PECVD). The influence of Si addition on the bonding structure, nanomechanical behaviour of the DLC films was investigated by Raman and X-ray photoelectron (XPS) spectroscopy, and Fourier transform infrared (FT-IR) spectroscopy. Silicon addition promoted the formation of sp3 bonding and reduced the hardness. The results show that the ratio of SiH4 in the gas mixture was successively varied to clarify its influence on the microstructure for the DLC films.
Keywords :
Fourier transform spectra; Raman spectra; X-ray photoelectron spectra; crystal microstructure; diamond-like carbon; elemental semiconductors; hardness; infrared spectra; plasma CVD; semiconductor thin films; silicon; C:Si; DLC-Si films; Fourier transform infrared spectroscopy; RF-PECVD; Raman spectroscopy; Si substrate; X-ray photoelectron spectroscopy; bonding structure; hardness; microstructure; nanomechanical behaviour; radio frequency plasma-enhanced chemical vapour deposition; silicon-doped diamond-like carbon films; sp3 bonding; Bonding; Carbon; Diamond-like carbon; Films; Microelectronics; Silicon; Substrates; Diamond-like carbon film; PECVD; Raman; XPS;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316308
