Selective MOVPE technique and its applications for photonic devices

The selective growth technique on a mask-patterned planar substrate has attracted much attention because it enables simple integration of thickness-tapered waveguides as well as bandgap-energy control in waveguide layers. Moreover, narrow-stripe selective MOVPE enables the formation of active/passive waveguide layers without a mesa-etching process, which is an attractive approach to the fabrication of photonic devices. The paper reviews this technique, and discusses several device applications.