Metallic tube-tolerant ternary dynamic content-addressable memory based on carbon nanotube transistors

The design of a dynamic content-addressable memory (DCAM) cell using carbon nanotube (CNT) field effect transistors is explored. A four CNTFET design is presented and the functionality of a ternary DCAM cell using SPICE simulation is verified. Using an array of asymmetrically correlated tube technique, it is demonstrated how the presented design could be made functional even in the presence of metallic CNTs.