DocumentCode
349338
Title
Self-assembled nanostructures using anodized alumina thin films for optoelectronic applications
Author
Crouse, David ; Lo, Yu-Hwa ; Miller, A.E. ; Crouse, M.
Author_Institution
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
234
Abstract
Anodized aluminum has recently attracted much attention because of its desirable porous structure. The pore structure is a self-ordered hexagonal array of cells with cylindrical pores in an alumina matrix of variable sizes with diameters of 25 to 300 nm with depths exceeding 100 μm depending on the anodizing conditions used. These properties make anodized aluminum a desirable material for many optoelectronic devices including polarizers, photonic crystals, low threshold current lasers, and investigation of light-surface plasmon interactions in metals. The conventional approach to fabricate porous alumina is to use bulk or thin sheets of aluminum and then replicate this pattern into the desired substrate by one of several methods involving a tedious film transfer. However, in this work, a more convenient and practical method of fabricating the porous alumina structure using an evaporated film of aluminum on silicon and other substrates, subsequent pattern transfer, and its use in optoelectronic applications will be discussed
Keywords
alumina; anodisation; anodised layers; nanostructured materials; optical films; optical materials; optical polarisers; optical switches; photonic band gap; porous materials; self-assembly; sputter etching; 25 to 300 nm; Al2O3; RIE; Si; alumina matrix; anodized alumina thin films; cells with cylindrical pores; etch mask; evaporated film; light-surface plasmon interactions; low threshold current lasers; optical switching; optoelectronic applications; pattern transfer; photonic crystals; polarizers; porous structure; self-assembled nanostructures; self-ordered hexagonal array; Aluminum; Crystalline materials; Inorganic materials; Nanostructures; Optical materials; Optoelectronic devices; Self-assembly; Sheet materials; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-5634-9
Type
conf
DOI
10.1109/LEOS.1999.813565
Filename
813565
Link To Document