Thin film 2-D photonic crystals high-performance light-emitting diodes

Author

Boroditsky, Misha ; Vrijen, Rutger ; Kranss, T.F. ; Coccioli, Roberto ; Bhat, Raj ; Yablonovitch, Eli

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

238

Abstract

Photonic crystals can be used to modify spontaneous emission. Initially, it was proposed to use photonic crystals to inhibit spontaneous emission, but they can be employed to enhance it as well, with significant implications for light emitting diode structures. We show that thin slab 2-D photonic crystals can provide a spontaneous emission enhancement up to F_p=5 and an overall extraction enhancement up of 8 times. We used thin-film InGaAs/InP 2-D photonic crystal at ambient temperature, but the results would apply equally to InGaN thin films

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; optical pumping; photoluminescence; photonic band gap; quantum well devices; semiconductor quantum wells; spontaneous emission; InGaAs-InP; angular resolved spectra; high-performance light-emitting diodes; leaky photonic crystal modes; photo-pumped LED; photoluminescence; spontaneous emission enhancement; thin film 2D photonic crystals; Dielectric thin films; Lattices; Light emitting diodes; Periodic structures; Photonic crystals; Radiative recombination; Slabs; Spontaneous emission; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.813567

Filename

813567