DocumentCode :
3493434
Title :
CMOS Compatible Dual Metal Gate Integration with Successful Vth Adjustment on High-k HfTaON by High-Temperature Metal Intermixing
Author :
Ren, C. ; Chan, D.S.H. ; Loh, W.-Y. ; Peng, J.W. ; Balakumar, S. ; Jiang, Y. ; Tung, C.H. ; Du, A.Y. ; Lo, G.Q. ; Kumar, R. ; Balasubramanian, N. ; Kwong, D.L.
fYear :
2006
fDate :
19-21 Sept. 2006
Firstpage :
154
Lastpage :
157
Abstract :
The paper reports a novel dual metal gate (MG) integration technique for gate-first CMOS process by intermixing (InM) of ultra-thin metal and metal nitride (MNx) films at high temperature together with source/drain (S/D) activation process. In this process, a thin (~2 nm) TaN buffer layer is used to prevent the gate dielectric being exposed during the metal etching process. Work function (WF) of TaN can be adjusted for NMOS/PMOS by intermixing of the TaN buffer layer with other metals on top of TaN during S/D activation. Prototype metal stacks of TaN/Tb/TaN (NMOS) and TaN/Ti/HfN (PMOS) have been integrated on a single wafer, with WF of 4.15 eV and 4.72 eV achieved, respectively. Successful Vth adjustment and good transistor characteristics are also demonstrated on HfTaON dielectric
Keywords :
CMOS integrated circuits; etching; hafnium compounds; high-k dielectric thin films; semiconductor technology; tantalum compounds; terbium; titanium; wafer-scale integration; HfTaON; TaN-Tb-TaN; TaN-Ti-HfN; dual metal gate integration; gate-first CMOS process; high-temperature metal intermixing; metal etching; source-drain activation; ultra-thin metal-metal nitride intermixing; work function; Atherosclerosis; Buffer layers; CMOS process; Etching; Hafnium; High K dielectric materials; High-K gate dielectrics; Laminates; MOS devices; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
ISSN :
1930-8876
Print_ISBN :
1-4244-0301-4
Type :
conf
DOI :
10.1109/ESSDER.2006.307661
Filename :
4099879
Link To Document :
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