Characterization of the Depth Distribution and Electrical Activation and Deactivation of Ion Implanted Dopants in Silicon

Author

Shu Qin

Author_Institution

Micron Technol. Inc., Boise, ID, USA

Volume

61

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

3625

Lastpage

3631

Abstract

Electrical-assisted diffusion of carriers is proposed as a hypothesis of major dopant deactivation kinetics. New metrology methods, including SIMS/ARXPS and continuous anodic oxidation technique/differential Hall effect methods, are used in this paper to supply supporting evidences and data. The n-type (P- and As-based) implants show more serious deactivation, but similar reactivation to p-type (B-based) implants, which can be interpreted by the electrical-assisted diffusion mechanism. Reactivation occurs only when the excess dopants exist-dopant concentration is higher than its electrically active solid solubility limit.

Keywords

Hall effect; X-ray photoelectron spectra; anodisation; arsenic; boron; carrier mobility; diffusion; doping profiles; elemental semiconductors; ion implantation; phosphorus; secondary ion mass spectra; semiconductor doping; silicon; solid solubility; ARXPS; SIMS; Si:As; Si:B; Si:P; continuous anodic oxidation technique; depth distribution; differential Hall effect methods; dopant concentration; dopant deactivation kinetics; electrical activation; electrical-assisted carrier diffusion; electrically active solid solubility limit; ion implanted dopants; n-type implants; p-type implants; Annealing; Electrical resistance measurement; Implants; Impurities; Silicon; Solids; Substrates; Concentration-dependent diffusion; deactivation; electrical-assisted diffusion; electrically active solid solubility; reactivation; segregation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2342535

Filename

6880328