Title :
Carbon nanotube field-effect transistor for GHz operation
Author :
Bethoux, J.-M. ; Happy, H. ; Dambrine, G. ; Borghetti, J. ; Derycke, V. ; Goffman, M. ; Bourgoin, J.P.
Author_Institution :
Inst. d´´Electronique, de Microelectronique et de Nanotechnologie, Villeneuve d´´Ascq
Abstract :
The paper reports high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency FT of 1 GHz, with a slope of -20dB/decade, for the first time
Keywords :
S-parameters; carbon nanotubes; microwave field effect transistors; 1 GHz; CNT-FET; S-parameter measurement; carbon nanotube field-effect transistor; high frequency performance; Aluminum oxide; CNTFETs; Carbon nanotubes; Coplanar transmission lines; Frequency; Gold; Hafnium; Impedance; Oxidation; Self-assembly;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307674
