DocumentCode
3493763
Title
Combinatorial algorithms for BJT model parameter extraction
Author
Wang, H. ; Yang, H.Z. ; Hu, G.Z.
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear
1996
fDate
26-28 Nov 1996
Firstpage
144
Lastpage
147
Abstract
This paper presents some combinatorial algorithms for global optimization problems, which can be applied to solve model parameter extraction in bipolar junction transistors (BJT). The main advantage of combinatorial algorithms to a traditional algorithm like Gauss-Newton method, lies in that it needs no computation of the gradient of the objective function. Moreover, the global optimality of these approach is also better than Gauss-Newton method. As the selection of the initial point and iterative strategies proposed in this paper are based on a global search, the combinatorial algorithms are more simple, efficient, and suitable for global optimization. Examples are given to demonstrate the validity and efficiency of the proposed approach
Keywords
bipolar transistors; combinatorial mathematics; iterative methods; minimisation; parameter estimation; semiconductor device models; BJT model parameter extraction; bipolar junction transistors; combinatorial algorithms; global optimization; global search; initial point selection; iterative strategies; orthogonal design; Circuit simulation; Computational modeling; Computer simulation; Iterative algorithms; Least squares methods; Mathematics; Newton method; Parameter extraction; Recursive estimation; Simulated annealing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location
Penang
Print_ISBN
0-7803-3388-8
Type
conf
DOI
10.1109/SMELEC.1996.616471
Filename
616471
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