• DocumentCode
    3493763
  • Title

    Combinatorial algorithms for BJT model parameter extraction

  • Author

    Wang, H. ; Yang, H.Z. ; Hu, G.Z.

  • Author_Institution
    Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
  • fYear
    1996
  • fDate
    26-28 Nov 1996
  • Firstpage
    144
  • Lastpage
    147
  • Abstract
    This paper presents some combinatorial algorithms for global optimization problems, which can be applied to solve model parameter extraction in bipolar junction transistors (BJT). The main advantage of combinatorial algorithms to a traditional algorithm like Gauss-Newton method, lies in that it needs no computation of the gradient of the objective function. Moreover, the global optimality of these approach is also better than Gauss-Newton method. As the selection of the initial point and iterative strategies proposed in this paper are based on a global search, the combinatorial algorithms are more simple, efficient, and suitable for global optimization. Examples are given to demonstrate the validity and efficiency of the proposed approach
  • Keywords
    bipolar transistors; combinatorial mathematics; iterative methods; minimisation; parameter estimation; semiconductor device models; BJT model parameter extraction; bipolar junction transistors; combinatorial algorithms; global optimization; global search; initial point selection; iterative strategies; orthogonal design; Circuit simulation; Computational modeling; Computer simulation; Iterative algorithms; Least squares methods; Mathematics; Newton method; Parameter extraction; Recursive estimation; Simulated annealing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
  • Conference_Location
    Penang
  • Print_ISBN
    0-7803-3388-8
  • Type

    conf

  • DOI
    10.1109/SMELEC.1996.616471
  • Filename
    616471