Title :
Co-integration of 2 mV/dec Subthreshold Slope Impact Ionization MOS (I-MOS) with CMOS
Author :
Mayer, F. ; Le Royer, Cyrille ; Le Carval, Gilles ; Tabone, C. ; Clavelier, L. ; Deleonibus, S.
Author_Institution :
CEA, Grenoble
Abstract :
The reduction of the subthreshold slope S in conventional MOSFETs hits against the diffusion phenomena which limits S to 60 mV/dec at 300K. This paper deals with a new type of device, the impact ionization MOSFET (I-MOS), which allows few mv/dec subthreshold slopes. For the first time, classical CMOS have been co-integrated with complementary I-MOS (CI-MOS) on silicon-on-insulator wafers (SOI). Using a standard CMOS process, we have obtained fully functional n & p MOSFETs, and n & p I-MOS with S respectively down to 6 and 2 mV/dec
Keywords :
CMOS integrated circuits; MOSFET; impact ionisation; silicon-on-insulator; CMOS process; SOI wafers; complementary I-MOS; diffusion phenomena; impact ionization MOS; impact ionization MOSFET; n MOSFET; p MOSFET; silicon-on-insulator wafers; subthreshold slope; CMOS process; CMOS technology; Impact ionization; Isolation technology; Leakage current; MOSFETs; Resists; Semiconductor films; Silicon on insulator technology; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307698
