DocumentCode :
3494298
Title :
Extrinsic, Parasitic Capacitance Contributions of MOSFETs, their Impact on Performance, and their Modeling
Author :
Mueller, Judith ; Caruyer, Gregory ; Thoma, Rainer ; Bernicot, Christophe ; Juge, Andre
Author_Institution :
Freescale Semicond., Crolles
fYear :
2006
fDate :
Sept. 2006
Firstpage :
323
Lastpage :
326
Abstract :
We study layout dependent parasitic capacitance contribution of MOSFETs with 3-dim simulations, and show, that these capacitance contributions are for narrow, short devices comparable to intrinsic contributions. We show that the performance of 65-nm technology is strongly affected by these components, and have therefore been modeled correctly in circuit simulations. We propose a methodology how to accurately and consistently model them in a design flow. The methodology is validated with ring oscillator measurements
Keywords :
MOSFET; capacitance; semiconductor device models; 3D circuit simulations; 65 nm; MOSFET parasitic capacitance contributions; ring oscillator measurements; Circuit optimization; Circuit simulation; Contacts; Delay; Design methodology; MOSFETs; Parasitic capacitance; Ring oscillators; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
ISSN :
1930-8876
Print_ISBN :
1-4244-0301-4
Type :
conf
DOI :
10.1109/ESSDER.2006.307703
Filename :
4099921
Link To Document :
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