DocumentCode
3494440
Title
Modelling parasitic bipolar devices in advanced smart-power technologies
Author
Leone, A. ; Speciale, N. ; Graffi, S. ; Masetti, G. ; Graziano, V.
Author_Institution
Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
fYear
1997
fDate
28-30 Sep 1997
Firstpage
127
Lastpage
130
Abstract
In this work we present an improvement of bipolar transistor models which can correctly predict the behavior of the reverse current gain. The proposed approach is particularly useful for modelling parasitic devices of the complex multiterminal bipolar and MOS transistors found in advanced smart-power technologies
Keywords
power integrated circuits; advanced smart-power technologies; bipolar transistor models; multiterminal MOS transistors; multiterminal bipolar transistors; parasitic bipolar devices; reverse current gain; Bipolar transistors; Circuit simulation; Feedback circuits; Integrated circuit modeling; Isolation technology; Low voltage; MOSFETs; Power transistors; Predictive models; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-3916-9
Type
conf
DOI
10.1109/BIPOL.1997.647417
Filename
647417
Link To Document