In-situ ion implantation of Xe into Al with high-resolution high-voltage electron microscopy

An ION/HVEM system which consists of a high-voltage transmission electron microscope and dual ion implanters was newly developed at NRIM. 30-50 keV Xe⁺ ions and 1000 keV electrons were used to irradiate Al at room temperature during observation of atomic structure with high-resolution transmission electron microscopy (HRTEM). Prior to in-situ observation, the selective imaging condition of Xe atoms was established. The off-Bragg technique contributes to delete matrix lattice image of Al and enhances the precipitate image of Xe. The equilibrium shape of Xe nanocrystals is a truncated cuboctahedron facing {111} and {100} planes. Dynamic process of a defect introduction and its recovery was successfully recorded on video-tape. The fluctuation of atoms in a Xe nanocrystal was firstly observed in the nucleation stage under ion implantation