Comparison of FIB-induced physical and chemical etching

Author

Park, Y.K. ; Paszti, F. ; Takai, M. ; Lehrer, C. ; Frey, L. ; Ryssel, H.

Author_Institution

Res. Center for Mater. Sci. at Extreme Conditions, Osaka Univ., Japan

Volume

2

fYear

1999

fDate

36495

Firstpage

820

Abstract

The localized impurity incorporation during 30 keV Ga⁺ FIB processing such as physical etching and gas assisted etching with iodine gas has been investigated using the RBS mapping images by a 300 keV Be²⁺ microprobe with a beam spot size of 80 nm. Sputtering process simulation using the TRIDYN code was performed to compare the etching rate and residual Ga atoms with those by experiment. Residual Ga atoms were found to distribute at and nearby the bottom of the etched area due to implantation and redeposition from the Ga FIB. The residual Ga concentration increased with the increase in ion dose up to 4×10¹⁶ Ga⁺/cm² due to the implantation, while above 1×10¹⁷ Ga⁺/cm² the Ga concentration gradually saturated due to the beginning of sputtering

Keywords

Rutherford backscattering; focused ion beam technology; gallium; impurity distribution; ion implantation; sputter etching; 30 keV; 300 keV; 80 nm; Be; FIB-induced chemical etching; FIB-induced physical etching; Ga; Ga⁺ focused ion beam etching; RBS; Rutherford backscattering; TRIDYN code; gas assisted etching; implantation; localized impurity incorporation; redeposition; residual atoms; sputter etching; Chemicals; Focusing; Impurities; Ion beams; Materials science and technology; Nuclear physics; Particle beams; Scanning electron microscopy; Sputter etching; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813794

Filename

813794