Title :
Effective Mobility Extraction Based on a Split RF C-V Method for Short-Channel FinFETs
Author :
Ramos, J. ; Severi, S. ; Augendre, E. ; Kerner, C. ; Chiarella, T. ; Nackaerts, A. ; Hoffmann, T. ; Collaert, N. ; Jurczak, M. ; Biesemans, S.
Author_Institution :
Silicon Process & Device Technol. Div., IMEC, Leuven
Abstract :
In this paper, authors investigated for the first time the effective mobility (mueff) in short-channel FinFET transistors. Dedicated test structures for radio-frequency (RF) split C-V measurements enabled short-channel FinFET C-V measurements, and consequently, accurate effective channel length (Leff) calculation for reliable muff extraction. muff is extracted for FinFETs down to dimensions of 60nm fin height, 25nm fin width and 70nm Lff, with poly-Si/MOCVD-TiN gate stacks on SiON dielectrics. Promising non-degraded long/short channel hole mobility behavior is reported, whereas electron mobility decreases with Lff
Keywords :
MOCVD; MOSFET; dielectric materials; electron mobility; hole mobility; semiconductor device measurement; silicon; silicon compounds; titanium compounds; 25 nm; 60 nm; 70 nm; MOCVD-TiN gate stacks; RF C-V method; SiON; SiON dielectrics; TiN; channel hole mobility; effective channel length; effective mobility extraction; electron mobility; poly-Si gate stacks; radio-frequency split C-V measurements; short-channel FinFET C-V measurements; short-channel FinFET transistors; Capacitance measurement; Capacitance-voltage characteristics; Degradation; Dielectric measurements; FETs; FinFETs; Implants; Length measurement; Radio frequency; Scattering;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307713
