Experimental Evidence for Reduction of Gate Tunneling Current in FinFET Structures and Its Dependence on the Fin Width

In this work, we present for the first time experimental evidence for the reduced gate tunneling current density in narrow FinFET structures compared to quasi-planar very wide-fin structures. This reduction is observed for both nand p-channel and is found to be larger for HfO₂ than for SiON. For a given gate dielectric, the above reduction depends on the fin width. For SiON with an equivalent oxide thickness of 1.8 nm in undoped n-channel devices, it varies from factor of 2.1 to 5.2, when the fin width decreases from 80 to 20 nm