• DocumentCode
    3494560
  • Title

    Comparison of termination structure design by device simulator

  • Author

    Liao, Chien-Nan ; Lai, Ping-hung ; Li, Tien-Chun ; Chien, Feng-Tso ; Tsai, Yao-Tsung

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
  • fYear
    2010
  • fDate
    16-18 June 2010
  • Firstpage
    530
  • Lastpage
    533
  • Abstract
    Termination region plays an important role in high voltage power VDMOSFETs. Termination structure such as floating-field-limiting-rings and field plates are the common structures used in a termination region because they can be fabricated without additional masks. However, sometimes we use both of them, sometimes only the floating-field-limiting-ring. The difference between these structures must be known while designing. In this paper, we compare and discuss the difference of the floating-field-limiting-rings with and without field plates. Understanding the difference is helpful for designing and saving time.
  • Keywords
    Avalanche breakdown; Doping; Electric fields; Electric potential; P-n junctions; Field plate; Floating-field-limiting-ring; Power VDMOSFET; Termination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics for Distributed Generation Systems (PEDG), 2010 2nd IEEE International Symposium on
  • Conference_Location
    Hefei, China
  • Print_ISBN
    978-1-4244-5669-7
  • Type

    conf

  • DOI
    10.1109/PEDG.2010.5545761
  • Filename
    5545761