DocumentCode
3494560
Title
Comparison of termination structure design by device simulator
Author
Liao, Chien-Nan ; Lai, Ping-hung ; Li, Tien-Chun ; Chien, Feng-Tso ; Tsai, Yao-Tsung
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear
2010
fDate
16-18 June 2010
Firstpage
530
Lastpage
533
Abstract
Termination region plays an important role in high voltage power VDMOSFETs. Termination structure such as floating-field-limiting-rings and field plates are the common structures used in a termination region because they can be fabricated without additional masks. However, sometimes we use both of them, sometimes only the floating-field-limiting-ring. The difference between these structures must be known while designing. In this paper, we compare and discuss the difference of the floating-field-limiting-rings with and without field plates. Understanding the difference is helpful for designing and saving time.
Keywords
Avalanche breakdown; Doping; Electric fields; Electric potential; P-n junctions; Field plate; Floating-field-limiting-ring; Power VDMOSFET; Termination;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics for Distributed Generation Systems (PEDG), 2010 2nd IEEE International Symposium on
Conference_Location
Hefei, China
Print_ISBN
978-1-4244-5669-7
Type
conf
DOI
10.1109/PEDG.2010.5545761
Filename
5545761
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