Title :
MeV implantation introduced damage at the LOCOS bird´s beak in 0.35 μm flash memory devices
Author :
Wu, Hong J. ; Bhattacharya, Surya ; Krishnamurthy, Shyam ; Sharma, Umesh
Author_Institution :
Adv. Process Technol., Rockwell Semicond. Syst., Newport Beach, CA, USA
Abstract :
This paper reports on the impact of high energy (MeV) retrograde well implants on the reliability of Flash Memory devices. These implants are shown to severely damage the oxide at the LOCOS bird´s beak edge. The degree of SiO2 amorphization caused by the high-energy ion implantation is shown to be enhanced by the LOCOS structure. The amorphization causes accelerated oxide loss during subsequent oxide etch-backs. Both performance and reliability of Flash Memory cells is degraded due to this damage. We demonstrate a technique for reducing the implant induced damage and thereby improve device performance and reliability
Keywords :
flash memories; ion beam effects; ion implantation; semiconductor device reliability; semiconductor doping; 0.35 μm flash memory devices; 0.35 mum; LOCOS bird´s beak; MeV implantation introduced damage; SiO2 amorphization; device performance; high energy retrograde well implants; implant induced damage; oxide etch-backs; reliability; CMOS technology; Crystalline materials; Etching; Flash memory; Hafnium; Implants; Semiconductor device reliability; Semiconductor materials; Silicon; Tensile stress;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813831
