DocumentCode :
3494750
Title :
A high power density 26 V GaAs pHEMT technology
Author :
Green, B.M. ; Lan, E. ; Li, P. ; Hartin, O. ; Gaw, C.A. ; CdeBaca, M. ; Johnson, E.M. ; Klingbeil, L.S. ; Fisher, P. ; Kim, J. ; Maurer, D. ; Knappenberger, B. ; Miller, M. ; Weitzel, C.E.
Author_Institution :
Motorola Semicond. Products Sector, USA
Volume :
2
fYear :
2004
fDate :
6-11 June 2004
Firstpage :
817
Abstract :
This report presents a GaAs pHEMT technology optimized for 26 V drain bias. At this bias, a 2.14 GHz gate width scaling study demonstrates output power densities of 1.8-2.1 W/mm of output power at 1 dB gain compression (P1dB) for device sizes ranging from 14.4 mm down to 3.6 mm respectively. Power added efficiency (PAE) remains nearly constant at 59-61% for these device sizes. Devices with 14.4 mm gate widths produced a Pias of 26 W (1.8 W/mm) with an associated power-added efficiency (PAE) of 61%. Thermal imaging shows a thermal resistance of approximately 4.2°C/W at a 36°C case temperature for 14.4 mm (26 W) devices. A high temperature step stress reliability study shows a median time to failure (MTTF) of 1.6×107 hours for a 150°C channel temperature with a thermal activation energy of 1.8 eV. These results represent the best combination of power density, PAE, and reliability reported for any GaAs-based FET technology.
Keywords :
III-V semiconductors; gallium arsenide; power HEMT; semiconductor device reliability; 1 dB; 1.44 to 3.6 mm; 1.6×107 h; 1.8 eV; 150 degC; 2.14 GHz; 26 V; 26 W; 36 degC; GaAs; GaAs pHEMT technology; PAE; channel temperature; high electron mobility transistor; high power density; median time to failure; power added efficiency; thermal activation energy; thermal imaging; thermal resistance; FETs; Gain; Gallium arsenide; PHEMTs; Power generation; Temperature; Thermal management; Thermal resistance; Thermal stresses; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN :
0149-645X
Print_ISBN :
0-7803-8331-1
Type :
conf
DOI :
10.1109/MWSYM.2004.1339090
Filename :
1339090
Link To Document :
بازگشت