Preparation of new carbon films by ion-beam-assisted plasma CVD

Ion-beam-assisted plasma chemical vapor deposition (ion-beam-assisted plasma CVD) was used in experiments for depositing crystalline thin films of carbon nitride such as β-C₃N ₄. The films were deposited by a plasma CVD with simultaneous irradiation of high-velocity nitrogen ions. An advantage of this method Is the ability to control crystallinity of deposited films. As a result, crystalline graphite films containing nitrogen atoms were formed. The deposited films contained the maximum nitrogen content of about 2 at.%. Although the aim of depositing crystalline carbon nitride film was not achieved in the present investigation, the method is shown to improve the crystallinity of deposited films