• DocumentCode
    349488
  • Title

    Formation of vanadium oxide by ion implantation and heat treatment

  • Author

    Narumi, Kazumasa ; Yamamoto, Shunya ; Miyashita, A. ; Aoki, Yasushi ; Naramoto, Hiroshi

  • Author_Institution
    Adv. Sci. Res. Center, JAERI, Ibaraki, Japan
  • Volume
    2
  • fYear
    1999
  • fDate
    36495
  • Firstpage
    990
  • Abstract
    Single-crystal sapphire coimplanted with vanadium and oxygen ions and annealed subsequently was analyzed using RBS/channeling and X-ray-diffraction techniques. Behavior of the substrate and implanted vanadium to thermal annealing depends on crystal orientation of the substrate, temperature during the implantation and oxygen fluence relative to that of vanadium. V2O3 and VO2 precipitates were formed in c-axis-oriented sapphire depending on the fluence of oxygen
  • Keywords
    Rutherford backscattering; X-ray diffraction; annealing; crystal orientation; ion implantation; vanadium compounds; RBS/channeling; V2O3; VO2; VO2 precipitates; X-ray-diffraction techniques; c-axis-oriented sapphire; heat treatment; ion implantation; oxygen fluence; Annealing; Crystalline materials; Crystallography; Heat treatment; Ion implantation; Magnetic materials; Optical scattering; Optical switches; Substrates; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1998.813845
  • Filename
    813845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=349488