Atomic scale modeling of boron transient diffusion in silicon

Author

Caturla, M.J. ; Lilak, A. ; Johnson, M.D. ; Giles, M. ; De La Rubia, T. Diaz ; Law, M. ; Foad, Mageed

Author_Institution

Lawrence Livermore Nat. Lab., CA, USA

Volume

2

fYear

1999

fDate

36495

Firstpage

1022

Abstract

We present results from predictive atomic level simulation of boron diffusion in silicon under a wide variety of implant and annealing conditions. The parameters for this simulation have been extracted from first principles approximation models and molecular dynamics simulations. The results are compared with experiments showing good agreement final cases. The parameters and reactions used have been implemented into a continuum-level model simulator

Keywords

annealing; boron; diffusion; elemental semiconductors; ion implantation; molecular dynamics method; semiconductor doping; semiconductor process modelling; silicon; Si:B; annealing conditions; atomic level simulation; atomic scale modeling; boron diffusion; boron transient diffusion; continuum-level model simulator; first principles approximation models; implant conditions; molecular dynamics simulations; silicon; Boron; Computational modeling; Implants; Ion implantation; Kinetic theory; Monte Carlo methods; Predictive models; Semiconductor process modeling; Silicon; Simulated annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813853

Filename

813853