Role of annealing time on junction depth for high dose phosphorus implants

Author

Prussin, S. ; Bil, Christiaan A. ; Rendon, Michael J. ; Romig, Terry

Author_Institution

California Univ., Los Angeles, CA, USA

Volume

2

fYear

1999

fDate

36495

Firstpage

1036

Abstract

Twenty-two wafers were implanted with 5×10¹⁵ P cm ^-2 at 50 keV, one set of 11 with a beam current of 5.0 mA. The remaining 11 with a beam current of 0.5 mA. Wafers of each set were annealed at 800°C for 1, 2, 4, 8, 16, 30, 60, 120, and 240 secs. All wafers were evaluated by secondary ion mass spectrometry, transmission electron microscopy, sheet resistivity, thermal wave analysis and tapered groove profilometry. Transient enhanced diffusion was completed during the first 4 to 8 seconds. Loop dislocations were detected after 1 second of anneal, suggesting that transient enhanced diffusion was restricted by the absorption of the free interstitials by the growing loop dislocations

Keywords

annealing; dislocation interactions; dislocation loops; electrical resistivity; elemental semiconductors; interstitials; ion implantation; p-n junctions; phosphorus; secondary ion mass spectra; semiconductor doping; silicon; transmission electron microscopy; 0.5 mA; 1 to 240 s; 5 mA; 50 keV; 800 C; Si:P; annealing time; beam current; free interstitials; high dose phosphorus implants; junction depth; loop dislocations; secondary ion mass spectrometry; sheet resistivity; tapered groove profilometry; thermal wave analysis; transient enhanced diffusion; transmission electron microscopy; Annealing; Conductivity measurement; Electron microscopy; Implants; Laboratories; Scanning electron microscopy; Silicon; Solids; Substrates; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813857

Filename

813857