Title :
Quantum well intermixing and wavelength-shifting in GaAs lasers by proton irradiation
Author :
Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Proton irradiation with subsequent rapid thermal annealing has been used to create intermixing in GaAs-Al0.3Ga0.7As quantum wells. Good recovery in the photoluminescence signals is observed, indicating that very few residual defects are present after annealing. This process is then extended to selectively induce intermixing and thus shift the lasing wavelengths of GaAs-based graded-index separate-confinement-heterostructure quantum well lasers with no observable degradation in the current threshold characteristics. This is a simple and very promising technique of integrating lasers of different wavelengths for wavelength-division-multiplexing applications
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; gradient index optics; integrated optoelectronics; photoluminescence; proton effects; quantum well lasers; rapid thermal annealing; semiconductor quantum wells; spectral line shift; GaAs-Al0.3Ga0.7As; GaAs-Al0.3Ga0.7As quantum wells; GaAs-based graded-index separate-confinement-heterostructure quantum well lasers; current threshold characteristics; laser integration; lasing wavelength shift; photoluminescence signal recovery; proton irradiation; quantum well intermixing; rapid thermal annealing; residual defects; wavelength-division-multiplexing applications; wavelength-shifting; Gallium arsenide; Laser theory; Optical buffering; Optical surface waves; Protons; Quantum well lasers; Rapid thermal annealing; Semiconductor lasers; Temperature; Wavelength division multiplexing;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616477
