• DocumentCode
    3495167
  • Title

    Improved performance and thermal stability of interdigitated power RF bipolar transistors with nonlinear base ballasting

  • Author

    Jang, Jaejune ; Kan, Edwin C. ; Dutton, Robert W. ; Arnborg, T.

  • Author_Institution
    Stanford Univ., CA, USA
  • fYear
    1997
  • fDate
    28-30 Sep 1997
  • Firstpage
    143
  • Lastpage
    146
  • Abstract
    A novel base ballasting scheme for interdigitated power RF bipolar transistors has demonstrated improved performance and thermal stability. The nonlinear ballast resistor in series with each base finger is implemented by depletion-mode FET, which requires only minor modification in the fabrication process. Mixed mode simulation, instead of analytical equations, is used for more universal device analyses
  • Keywords
    power bipolar transistors; depletion-mode FET; interdigitated power RF bipolar transistors; mixed-mode simulation; nonlinear ballast resistor; nonlinear base ballasting; thermal stability; Analytical models; Bipolar transistors; Electronic ballasts; FETs; Fabrication; Fingers; Nonlinear equations; Radio frequency; Resistors; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-3916-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1997.647421
  • Filename
    647421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3495167