Effect of nitrogen doping on the structure and properties of tetrahedral amorphous carbon films

The influence of nitrogen doping on the structure and properties of tetrahedral amorphous carbon (ta-C) films was investigated. Ta-C films were synthesized by a new plasma deposition technique, filtered arc deposition (FAD). Nitrogen was introduced into ta-C film by admitting high-purity nitrogen gas to the deposition chamber during film growth. Rutherford backscattering (RBS), atomic force microscopy (AFM), infrared (IR) reflection spectroscopy, spectroscopic ellipsometry (SE) and Hall measurement were used to characterize the structure and properties of nitrogen doped ta-C films, Research indicates that the variation of physical, optical and electrical properties results from the change of structure in films due to nitrogen doping