• DocumentCode
    349540
  • Title

    Formation of complex clusters in Ar/O2 gas cluster beams

  • Author

    Saito, Masahiro ; Hagiwara, Norihisa ; Toyoda, Noriaki ; Matsuo, Jiro ; Yamada, Isao

  • Author_Institution
    Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan
  • Volume
    2
  • fYear
    1999
  • fDate
    36495
  • Firstpage
    1226
  • Abstract
    Reactive cluster ion beams exhibit high sputtering yields and permit highly selective etching. Also, Ar cluster ion beams exhibit surface smoothing. Using a cluster beam formed from the mixtures of Ar and reactive gas, a high yield sputtering and effective surface smoothing can occur at the same time. In order to understand the cluster-surface interaction, the information on both cluster size distributions and the ratio of Ar/O2 is required. In this study, O2 cluster beams were formed with Ar gas mixture, and the cluster size distributions were measured by a time of flight (TOF) mass analyzer
  • Keywords
    argon; atom-surface impact; atomic clusters; molecular clusters; molecule-surface impact; oxygen; sputter etching; time of flight mass spectra; Ar-O2; Ar/O2 gas cluster beams; TOF mass analyzer; cluster size distributions; cluster-surface interaction; complex clusters formation; high sputtering yields; highly selective etching; reactive cluster ion beams; surface smoothing; time of flight mass analyzer; Argon; Atomic measurements; Chemicals; Ion beams; Rough surfaces; Size measurement; Smoothing methods; Sputter etching; Sputtering; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1998.813908
  • Filename
    813908