DocumentCode :
3496542
Title :
CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers
Author :
Huchuan Zhou ; Kropelnicki, Piotr ; Tsai, Julius Minglin ; Chengkuo Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2013
fDate :
20-24 Jan. 2013
Firstpage :
429
Lastpage :
432
Abstract :
An infrared sensor based on a vertically integrated double layer (VIDL) thermopile which comprises of 96 thermocouples on a suspended membrane has been designed and fabricated by a CMOS-compatible process. The properties of this thermopile are characterized. The responsivity (Rs) of the VIDL thermopile is 202.8V/W and the detectivity (D*) of it is 2.85×108 cmHz1/2 W-1.
Keywords :
CMOS analogue integrated circuits; elemental semiconductors; infrared detectors; silicon; thermocouples; thermopiles; CMOS-based thermopiles; CMOS-compatible process; Si; VIDL thermopile detectivity; VIDL thermopile responsivity; infrared sensor; suspended membrane; thermocouples; vertically-integrated double-layer thermopile; vertically-integrated double-polycrystalline silicon layers; Atmospheric measurements; Electrical resistance measurement; Semiconductor device measurement; Sensors; Silicon; Strips; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
ISSN :
1084-6999
Print_ISBN :
978-1-4673-5654-1
Type :
conf
DOI :
10.1109/MEMSYS.2013.6474270
Filename :
6474270
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3496542
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