Title :
CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers
Author :
Huchuan Zhou ; Kropelnicki, Piotr ; Tsai, Julius Minglin ; Chengkuo Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
An infrared sensor based on a vertically integrated double layer (VIDL) thermopile which comprises of 96 thermocouples on a suspended membrane has been designed and fabricated by a CMOS-compatible process. The properties of this thermopile are characterized. The responsivity (Rs) of the VIDL thermopile is 202.8V/W and the detectivity (D*) of it is 2.85×108 cmHz1/2 W-1.
Keywords :
CMOS analogue integrated circuits; elemental semiconductors; infrared detectors; silicon; thermocouples; thermopiles; CMOS-based thermopiles; CMOS-compatible process; Si; VIDL thermopile detectivity; VIDL thermopile responsivity; infrared sensor; suspended membrane; thermocouples; vertically-integrated double-layer thermopile; vertically-integrated double-polycrystalline silicon layers; Atmospheric measurements; Electrical resistance measurement; Semiconductor device measurement; Sensors; Silicon; Strips; Thermal conductivity;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-5654-1
DOI :
10.1109/MEMSYS.2013.6474270