Title :
Electro-optical characteristics for AlGaN solar-blind p-i-n photodiode: Experiment and simulation
Author :
Wang, X.D. ; Hu, W.D. ; Chen, X.S. ; Xu, J.T. ; Wang, L. ; Li, X.Y. ; Lu, W.
Author_Institution :
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
The fabrication and modeling for solar-blind AlGaN-based p-i-n photodiode have been presented. The simulated dark current characteristics are in good agreement with the experiments. It is found that the peak responsivity of 0.005A/W can be achieved at 265nm corresponding to the cutoff wavelength of the Al0.45Ga0.55N absorption layer. The transmission spectra drop to nearly zero due to the intense light absorption of n-type Al0.65Ga0.35N layer.
Keywords :
III-V semiconductors; aluminium compounds; dark conductivity; electro-optical effects; gallium compounds; light absorption; p-i-n photodiodes; wide band gap semiconductors; AlGaN; absorption layer; dark current characteristics; electrooptical characteristics; light absorption; peak responsivity; solar-blind p-i-n photodiode; transmission spectra; wavelength 265 nm; Absorption; Aluminum gallium nitride; Dark current; Detectors; PIN photodiodes; Semiconductor device measurement;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316493
