Title :
An accurate ´decoupled C-V´ method for characterizing channel and overlap capacitances of miniaturized MOSFET
Author :
Jyh-Chyurn Guo ; Hsu, C.C.-H. ; Lin, Pole-Shang ; Chung, S.S.
Author_Institution :
Nat. Tsing-Hua Univ., Hsin-Chu, Taiwan
Abstract :
A novel ´decoupled C-V´ technique is proposed to characterize the channel and overlap capacitances of miniaturized MOSFET´s. This method successfully decouples channel capacitance from overlap capacitance in submicron CMOS devices. The intrinsic channel capacitance can be well modeled by the quasi-static C-V theory. It allows the accurate determination of the effective channel length and effective channel doping concentration in submicron channel region. The bias dependence of the extrinsic overlap capacitance is observed to be channel-doping-concentration dependent.
Keywords :
CMOS integrated circuits; VLSI; capacitance; insulated gate field effect transistors; integrated circuit technology; semiconductor device models; CMOS technology; VLSI; bias dependence; decoupled C-V technique; effective channel doping concentration; effective channel length; intrinsic channel capacitance; miniaturized MOSFET; overlap capacitances; quasi-static C-V theory; submicron CMOS devices; CMOS technology; Capacitance measurement; Capacitance-voltage characteristics; Doping; Etching; MOS devices; MOSFET circuits; Semiconductor device modeling; Semiconductor process modeling; Very large scale integration;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263594
