New bulk dynamic threshold NMOS schemes for low-energy subthreshold domino-like circuits

Author

Elgharbawy, Walid ; Bayoumi, Magdy

Author_Institution

Center for Adv. Comput. Studies, Louisiana Univ., Lafayette, LA, USA

fYear

2004

fDate

19-20 Feb. 2004

Firstpage

115

Lastpage

120

Abstract

Dynamic threshold MOS circuits offer speed and energy saving advantages over the conventional subthreshold CMOS circuits; they are faster and consume less energy. In this paper a new bulk dynamic threshold MOS scheme for NMOS transistors (B-DTNMOS) in domino-like dynamic circuits is introduced. In this scheme the substrate of all the NMOS transistors is connected to the clock signal in dynamic circuits. The proposed scheme is shown to be 63% faster and has 37.2% energy savings compared to the regular subthreshold CMOS circuits.

Keywords

MOS integrated circuits; MOS logic circuits; MOSFET circuits; B-DTNMOS; NMOS transistors; bulk dynamic NMOS schemes; clock signal; domino-like dynamic circuits; dynamic threshold MOS circuits; low-energy domino-like circuits; subthreshold CMOS circuits; subthreshold domino-like circuits; threshold NMOS schemes; CMOS technology; Clocks; Energy consumption; Energy efficiency; Integrated circuit technology; Isolation technology; MOS devices; MOSFET circuits; Threshold voltage; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI, 2004. Proceedings. IEEE Computer society Annual Symposium on

Print_ISBN

0-7695-2097-9

Type

conf

DOI

10.1109/ISVLSI.2004.1339517

Filename

1339517