Above IC RF MEMS and BAW filters: fact or fiction?

Author

Ancey, P.

Author_Institution

STMicroelectronics, Crolles

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

5

Abstract

In the above IC integration, components are directly built monolithically upon or within the chip itself. The paper describes the works relative to bulk acoustic wave filter and RF MEMS (micro-switch and electromechanical resonator). The paper demonstrates the feasibility of a fully-integrated RF front-end using above-IC BAW integration technique for W-CDMA applications. A MEMS micro-switch, processed on top of a standard BiCMOS wafer including the driver, is also reported here. Finally, the paper presents a new low voltage micromechanical resonator based on suspended-gate MOSFET operating at 16 MHz which have a great potential for CMOS co-integrated reference oscillator applications

Keywords

BiCMOS integrated circuits; MOSFET; bulk acoustic wave devices; code division multiple access; micromechanical resonators; microswitches; passive filters; 16 MHz; BAW filters; BiCMOS wafer; CMOS co-integrated reference oscillator; W-CDMA applications; bulk acoustic wave filter; electromechanical resonator; integrated circuit RF MEMS; microswitch; suspended-gate MOSFET; Acoustic waves; BiCMOS integrated circuits; Micromechanical devices; Microswitches; Monolithic integrated circuits; Multiaccess communication; Radio frequency; Radiofrequency integrated circuits; Radiofrequency microelectromechanical systems; Resonator filters; Bulk Acoustic Wave filter; RF micro-switch; RF-MEMS; Resonant Suspended Gate MOSFET; electromechanical resonator;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311142

Filename

4100210