Abstract :
Notice of Violation of IEEE Publication Principles
"A Low Power 12.5Gb/s SiGe Limiting Amplifier Using a Feed-forward Adjustable Threshold Loss-Of-Signal Detector"
by Maxim, A. and Smith, D.
in the Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, October 2006, pp 1-4
After careful and considered review, it has been determined that the above paper is in violation of IEEE\´s Publication Principles.
Specifically, the coauthor\´s name was fabricated by Adrian Maxim and added to the paper. In response to an inquiry on this misconduct, Mr. Maxim acknowledged that the following people who have been listed as co-authors on several of his papers are fabricated names and that he is the only author:
C. Turinici, D. Smith, S. Dupue, M. Gheorge, R. Johns, D. Antrik
Additionally, in papers by Mr. Maxim that have co-authors other than those listed above, it was discovered in some cases that he had not consulted with them while writing the papers, and submitted papers without their knowledge.
Although Mr. Maxim maintains that not all of the data is falsified, IEEE nevertheless cannot assure the integrity of papers posted by him because of his repeated false statements.
Due to the nature of this violation, reasonable effort should be made to remove all past references to the above paper, and to refrain from any future references.A 12.5Gb/s limiting amplifier was realized in a 0.18mum 80GHz f T SiGe BiCMOS process. The wide bandwidth signal path consists of a cascade of emitter followers and cascoded differential stages, resulting in a significant power consumption reduction in comparison with standard Cherry-Hooper implementations. The output offset voltage was reduced to fractions of mV by using a dedicated active offset cancellation loop for each gain stage. The compensation capacitors were integrated on-chip by using a Miller multiplication effect. A loss-of-signal detector that can sense signals- down to mV level was achieved using a feed-forward architecture with data dependent comparison thresholds. The main IC specifications include: 60dB gain, 13GHz bandwidth, 1mV sensitivity, 0.2mV output offset voltage, 30mA current consumption from a 3.3V supply and 1.5times1.5mm2 die area
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; low-power electronics; wideband amplifiers; 0.18 micron; 12.5 Gbit/s; 13 GHz; 3.3 V; 30 mA; 60 dB; 80 GHz; BiCMOS process; Miller multiplication effect; SONET; SiGe; active offset cancellation loop; cascoded differential stages; compensation capacitors; data dependent comparison thresholds; emitter followers; feed-forward adjustable detector; limiting amplifier; threshold loss-of-signal detector; Bandwidth; BiCMOS integrated circuits; Detectors; Feedforward systems; Germanium silicon alloys; Notice of Violation; Paper technology; Silicon germanium; Voltage; SONET; SiGe; limiting amplifier;
